Stability of thermal equilibrium for
نویسنده
چکیده
A model for the time dependent behaviour of electrons in semiconductor devices is considered. The model incorporates nonequilibrium eeects caused by impurity generated trap levels in the forbidden band. Transport of conduction electrons is modelled by the standard drift-diiusion equation. Existence and uniqueness globally in time of initial-boundary value problems is proven as well as stability of the thermal equilibrium state.
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